کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837516 | 1525278 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Amphoteric properties of gold in zinc selenide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Amphoteric properties of gold in zinc selenide Amphoteric properties of gold in zinc selenide](/preview/png/9837516.png)
چکیده انگلیسی
Hall effect, electric conductivity, and charge carriers mobility in n-ZnSe single crystals doped with gold during the process of a long-term high-temperature annealing in Zn+Au melt with various Au contents were investigated in the temperature range from 77 to 300Â K. It has been established that, at low gold concentration, Au atoms form mainly donor-type interstitial Aui defects. The increase of Au concentration in Zn+Au melt leads to the formation of both simple AuZn defects and associative acceptors (AuZn-Aui), (AuZn-DZn), and (AuZn-VSe). These defects determine electrical properties of the crystals and they are responsible for the complex structure of excitonic and impurity radiation spectra. The influence of dopant concentration on both electrical and luminescent properties of n-ZnSe:Zn:Au crystals is investigated. The observed variations of electrical and luminescent properties are due to amphoteric properties of gold impurity in zinc selenide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 365, Issues 1â4, 1 August 2005, Pages 217-224
Journal: Physica B: Condensed Matter - Volume 365, Issues 1â4, 1 August 2005, Pages 217-224
نویسندگان
A.N. Avdonin, G.N. Ivanova, D.D. Nedeoglo, N.D. Nedeoglo, V.P. Sirkeli,