کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837557 | 1525279 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electronic properties of BAs and BxGa1âxAs, BxIn1âxAs alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Structural and electronic properties of the BAs compound and BxGa1âxAs, BxIn1âxAs alloys are studied using first principles calculations. New results on elastic constants, acoustic phonons and optical phonons frequencies are reported. The 4Ã4 Kane's interaction matrix is calculated in order to ease simulations of optoelectronic devices. Effective masses and Luttinger parameters for the valence bands are calculated. BxGa1âxAs and BxIn1âxAs alloys are simulated using the virtual crystal approximation (VCA). The BxGa1âxAs alloy lattice-matched to GaP substrate is found to be an indirect band gap semiconductor. The BxIn1âxAs alloys lattice-matched to InP and GaAs substrates, are found to be direct band gap semiconductors. The BxIn1âxAs alloy is proposed as an alternative solution for epitaxial growth of nanostructures for electronic (field effect transistors) and optoelectronic (lasers, saturable absorbers) devices on InP substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 364, Issues 1â4, 15 July 2005, Pages 263-272
Journal: Physica B: Condensed Matter - Volume 364, Issues 1â4, 15 July 2005, Pages 263-272
نویسندگان
N. Chimot, J. Even, H. Folliot, S. Loualiche,