Effect of hydrogen on the photoluminescence properties of Mn-implanted GaN

The effect of hydrogen on the optical properties of Mn-implanted GaN has been investigated using photoluminescence (PL). Near band edge (NBE) and defect-related emission bands in (Mn,H) co-implanted GaN were investigated. The intensity of NBE transition increases with increasing H+ dose, whereas both yellow luminescence (YL) and donor-acceptor pair (DAP) emission decrease after hydrogenation. The results demonstrate that co-implantation improves the optical quality of materials, consistent with passivation of crystal defects in implanted GaN. Additionally, the dependence of intensity for YL and DAP on H dose indicates that shallow acceptor-like defects are more likely to form a complex with H than deep defects.