کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837824 | 1525284 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing temperature on properties of MgxZn1âxO thin films deposited by RF magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
MgxZn1âxO films (x=0.16) have been prepared on silicon and sapphire substrates by radio frequency (RF) magnetron sputtering. The effects of annealing temperature on the structure, morphology and optical properties of MgxZn1âxO films are studied using XRD, AFM, photoluminescence and the transmittance spectra. The results indicate that the thin films have hexagonal wurtzite single-phase structure of ZnO, a preferred orientation with the c-axis perpendicular to the substrates, and with increasing annealing temperature the intensities of the (0Â 0Â 2) peaks for the XRD, grain sizes and intensities of the UV photoluminescence peaks increase while the FWHM of (002) peaks decrease, which demonstrate that the high quality of MgxZn1âxO films deposited by RF magnetron sputtering can be obtained by controlling annealing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 357, Issues 3â4, 15 March 2005, Pages 428-432
Journal: Physica B: Condensed Matter - Volume 357, Issues 3â4, 15 March 2005, Pages 428-432
نویسندگان
Xijian Zhang, Honglei Ma, Jin Ma, Fujian Zong, Hongdi Xiao, Feng Ji,