کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9841567 | 1525793 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic properties of boron-doped diamond on the border between the normal and the superconducting state
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic properties of boron-doped diamond on the border between the normal and the superconducting state Electronic properties of boron-doped diamond on the border between the normal and the superconducting state](/preview/png/9841567.png)
چکیده انگلیسی
We report on measurements of resistivity and magnetoresistivity, Hall effect and upper critical field on normal and superconducting heavily boron-doped diamond layer produced by microwave plasma assisted chemical vapour deposition. The magnetoresistivity shows a characteristic change as a function of the boron concentration with strong evidence for a closed Fermi surface for superconducting samples. Although experimental and theoretical results favour a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism, the observed dependence of the transition temperature TC on the hole concentration cannot be consistently described by the conventional theory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volume 432, Issues 1â2, 1 November 2005, Pages 65-70
Journal: Physica C: Superconductivity and its Applications - Volume 432, Issues 1â2, 1 November 2005, Pages 65-70
نویسندگان
K. Winzer, D. Bogdanov, Ch. Wild,