کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9841601 | 1525794 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We report the effects of oxygen post-annealing on critical current properties and normal state resistivities in ErBa2Cu3Oy/SrTiO3(Er123/STO) thin films fabricated in the substrate temperature range from 720 °C to 780 °C by pulsed laser deposition (PLD). Interestingly, for films fabricated below 760 °C, the critical current density (Jc) increased by oxygen post-annealing process from 0.3-0.6 Ã 106 A cmâ2 to the order of 106 A cmâ2 for the as-deposited films despite critical temperatures (Tc) of â¼90 K for both annealed and as-deposited films. In the 780 °C-deposited film, Jc was not obviously enhanced. X-ray diffraction and measurement of normal state resistivities revealed that the PLD-Er123/STO films showed high-quality crystallographic and electrical properties in films deposited below 760 °C. In high temperature resistivity measurements, the resistivity reduced with annealing time and showed a systematic change with changing oxygen partial pressure. These results strongly suggest that oxygen post-annealing is indispensable for improving Jc in 123 films fabricated through a non-equilibrium process such as the PLD method even though the as-deposited films show a Tc value of â¼90 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volumes 426â431, Part 2, 1 October 2005, Pages 1015-1020
Journal: Physica C: Superconductivity and its Applications - Volumes 426â431, Part 2, 1 October 2005, Pages 1015-1020
نویسندگان
S. Horii, M. Mukaida, Y. Ichino, K. Matsumoto, T. Ohazama, A. Ichinose, Y. Yoshida, J. Shimoyama, K. Kishio,