کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9841601 1525794 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures
چکیده انگلیسی
We report the effects of oxygen post-annealing on critical current properties and normal state resistivities in ErBa2Cu3Oy/SrTiO3(Er123/STO) thin films fabricated in the substrate temperature range from 720 °C to 780 °C by pulsed laser deposition (PLD). Interestingly, for films fabricated below 760 °C, the critical current density (Jc) increased by oxygen post-annealing process from 0.3-0.6 × 106 A cm−2 to the order of 106 A cm−2 for the as-deposited films despite critical temperatures (Tc) of ∼90 K for both annealed and as-deposited films. In the 780 °C-deposited film, Jc was not obviously enhanced. X-ray diffraction and measurement of normal state resistivities revealed that the PLD-Er123/STO films showed high-quality crystallographic and electrical properties in films deposited below 760 °C. In high temperature resistivity measurements, the resistivity reduced with annealing time and showed a systematic change with changing oxygen partial pressure. These results strongly suggest that oxygen post-annealing is indispensable for improving Jc in 123 films fabricated through a non-equilibrium process such as the PLD method even though the as-deposited films show a Tc value of ∼90 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volumes 426–431, Part 2, 1 October 2005, Pages 1015-1020
نویسندگان
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