
Deposition of phosphorus doped a-Si:H and μc-Si:H using a novel linear RF source
Keywords: جذب; 68.60.−p; 73.50.Pz; 78.30.−j; 81.15.GhSilicon; Chemical vapor deposition; Plasma deposition; Microcrystallinity; Absorption; Reflectivity; FTIR measurements