Keywords: B2 مواد نیمه هادی II-VI; A1. Doping; A1. Characterization; A3. Optical vapor supersaturated precipitation; A3. Solid state method; B1. Zinc compounds; B2. Semiconducting II-VI materials;
مقالات ISI B2 مواد نیمه هادی II-VI (ترجمه نشده)
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Keywords: B2 مواد نیمه هادی II-VI; A1. Computer simulation; A1. Convection; A1. Mass transfer; Heat transfer; A2. Traveling heater method growth; A2. Traveling solvent zone growth; B2. Semiconducting II-VI materials;
Measurement and evaluation of the defects in Cd1âxZnxTe materials by observing their etch pits in real time
Keywords: B2 مواد نیمه هادی II-VI; A1. Defects; A1. Etching; A1. Line defects; A1. Volume defects; B2. Semiconducting II-VI materials;
Investigation of Cd1âxMgxTe as possible materials for X and gamma ray detectors
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Semiconductor crystals based on CdTe with Se - Some structural and optical properties
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Compensated donors in semi-insulating Cd1âxMnxTe:In crystals
Keywords: B2 مواد نیمه هادی II-VI; A1. Electrical characteristics; A1. Heat treatment; A1. Activation energy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Defects subsystem and homogeneity region of ZnTe and CdTe crystals
Keywords: B2 مواد نیمه هادی II-VI; A1. Point defects; A1. Crystal structure; A1. Computer simulation; B2. Semiconducting II-VI materials;
Optimized optical vapor supersaturated precipitation for time-saving growth of ultrathin-walled ZnO single-crystal microtubes
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Crystallites; A3. Physical vapor deposition processes; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Photoluminescence properties of MgxZn1âxO films grown by molecular beam epitaxy
Keywords: B2 مواد نیمه هادی II-VI; A1. Optical microscopy; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A3. Atomic layer epitaxy; B1. Oxides; B2. Semiconducting II-VI materials;
Stepwise cooling technique as a method of growing high-perfection Cl-compensated CdTe
Keywords: B2 مواد نیمه هادی II-VI; A1. Crystal structure; A2. Growth from melt; A2. Single crystal growth; B2. Semiconducting II-VI materials;
Achieving high MgO content in wurtzite ZnO epilayer grown on ScAlMgO4 substrate
Keywords: B2 مواد نیمه هادی II-VI; A1. Phase equilibria; A3. Molecular beam epitaxy; B1. Zn1-xMgxO; B2. Semiconducting II-VI materials; Energy gap engineering;
Nucleation and formation of Au-catalyzed ZnTe nanowires on (0Â 0Â 1) GaAs by MBE: From planar to out-of-plane growth
Keywords: B2 مواد نیمه هادی II-VI; B1. Nanomaterials; B2. Semiconducting II-VI materials; A3. Molecular beam epitaxy; A3. Vapor-liquid-solid growth;
Infiltration of CdTe nano crystals into a ZnO wire vertical matrix by using the isothermal closed space technique
Keywords: B2 مواد نیمه هادی II-VI; A1. Low dimensional structures; A2. Hydrothermal crystal grown; A3. Physical vapor deposition processes; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Growth of 18O isotopically enriched ZnO nanorods by two novel VPT methods
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Nanostructures; A2. Growth from vapour; B1. Zinc compounds; B2. Semiconducting II-VI materials;
The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique
Keywords: B2 مواد نیمه هادی II-VI; A2. Single crystal growth; A2. Growth from high temperature solutions; A1. Computer simulation; A1. Mass transfer; B2. Semiconducting II-VI materials; B3. Terahertz devices;
Quality improvement of CdZnTe single crystal by ultrasound processing
Keywords: B2 مواد نیمه هادی II-VI; B2. Semiconducting II-VI materials; B2. Semiconducting cadmium compounds; A1. Impurities; A1. Defects; A1. Purification;
Donor impurity incorporation during layer growth of Zn II-VI semiconductors
Keywords: B2 مواد نیمه هادی II-VI; A1. Doping; A1. Diffusion; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Twinning in vapour-grown, large volume Cd1−xZnxTe crystals
Keywords: B2 مواد نیمه هادی II-VI; A1. X-ray topography; A2. Growth from vapour; B1. Tellurides; B2. Semiconducting II-VI materials
Structural and magnetic properties of hybrid ferromagnetic metal/semiconductor (ZnTe)/Co core-shell nanowires
Keywords: B2 مواد نیمه هادی II-VI; A1. Nanostructures; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting II-VI materials; B2. Magnetic materials;
Slip systems in wurtzite ZnO activated by Vickers indentation on {21¯1¯0} and {101¯0} surfaces at elevated temperatures
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Line defects; A2. Hydrothermal crystal growth; B1. Oxides; B2. Semiconducting II-VI materials;
CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature
Keywords: B2 مواد نیمه هادی II-VI; A3. Pulsed laser deposition; B2. Semiconducting II-VI materials; B3. Solar cells;
Growth of nonpolar ZnO Films on (100) β-LiGaO2 substrate by molecular beam epitaxy
Keywords: B2 مواد نیمه هادی II-VI; A1. X-ray diffraction; A3. Atomic layer epitaxy; A3. Molecular beam epitaxy; B1. Zinc compound; B2. Semiconducting II-VI materials
Growth, characterization, optical and vibrational properties of Sm3+ doped Cd0.8Zn0.2S semiconductor compounds
Keywords: B2 مواد نیمه هادی II-VI; A1. Doping; A1. X-ray diffraction; B2. Semiconducting II-VI materials;
The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method
Keywords: B2 مواد نیمه هادی II-VI; A1. Growth modes; A3. Atomic layer epitaxy; B2. Semiconducting II-VI materials
Growth of non-polar a-plane Zn1−xCdxO films by pulsed laser deposition
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Growth models; A3. Pulsed laser deposition; B1. Zinc compounds; B2. Semiconducting II-VI materials
Effects of different substrate surface modifications on the epitaxial ZnO/Si
Keywords: B2 مواد نیمه هادی II-VI; A1. Surface processes; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Development of Cadmium Magnesium Telluride (Cd1âxMgxTe) for room temperature X- and gamma-ray detectors
Keywords: B2 مواد نیمه هادی II-VI; A1. Defects; A1. Etching; B2. Semiconducting II-VI materials;
Spectroscopy characterization of MnSe nanoclasters randomly distributed in HgMnTe single crystal
Keywords: B2 مواد نیمه هادی II-VI; A1. Characterization; A1. Nanostructure; A2. Bridgman technique; B2. Semiconducting II-VI materials
Cobalt-doped ZnO nanowires on quartz: Synthesis by simple chemical method and characterization
Keywords: B2 مواد نیمه هادی II-VI; A1. Defects; A1. Doping; A1. Nanostructures; B1. Nanomaterials; B1. Zinc compounds; B2. Semiconducting II-VI materials
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
Keywords: B2 مواد نیمه هادی II-VI; A3. Metal organic chemical vapor deposition; B1. Sapphire; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Vertically arrayed Ga-doped ZnO nanorods grown by magnetron sputtering: The effect of Ga contents and microstructural evaluation
Keywords: B2 مواد نیمه هادی II-VI; A1. Doping; A1. Growth models; A1. Low dimensional structures; A1. Nanostructures; B1. Oxide; B2. Semiconducting II-VI materials;
Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient
Keywords: B2 مواد نیمه هادی II-VI; A1. Crystal structure; A1. Doping; A1. X-ray diffraction; A3. Physical vapor deposition processes; B1. Zinc compounds; B2. Semiconducting II-VI materials
Molecular simulation predictions of miscibility characteristics and critical exponents in compound semiconductors
Keywords: B2 مواد نیمه هادی II-VI; A1. Computer simulation; A1. Phase diagrams; A1. Solid solutions; B2. Semiconducting III-V materials; B2. Semiconducting II-VI materials; B2. Semiconducting ternary compounds
Influence of oxygen/argon ratio on structural, electrical and optical properties of Ag-doped ZnO thin films
Keywords: B2 مواد نیمه هادی II-VI; A1. X-ray diffraction; A3. Magnetron sputtering; B1. Oxides; B2. Semiconducting II-VI materials
Controlled synthesis of zigzagged and straight Ga-doped ZnO nanowires in hot-walled pulsed laser deposition
Keywords: B2 مواد نیمه هادی II-VI; 61.46.KmA1. Crystal morphology; A1. Doping; A1. Nanostructures; B1. Nanomaterials; B1. Oxides; B2. Semiconducting II-VI materials
Growth of a-plane ZnO thin films on LaAlO3(1 0 0) substrate by metal-organic chemical vapor deposition
Keywords: B2 مواد نیمه هادی II-VI; 78.55.Et; 68.55.−a; 61.10.−I; 81.15.GhA1. High resolution x-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Oxides; B2. Semiconducting II-VI materials
Ab initio study of nanostructures - Ultra thin ZnS films
Keywords: B2 مواد نیمه هادی II-VI; 73.90 +f; 73.21; 73.61.Ga; A1. Nanostructures; Low dimensional structures; B1. Nanomaterials; B2. Semiconducting II-VI materials; Phosphors;