
Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films
Keywords: حافظه بی اهمیت; 68.35.Rh; 72.15. âv; 68.55.Nq; 73.61.Jc; 85.30. âz; Nonvolatile memory; Ge2Sb2Te5 (GST); TEM; Reliability; PRAM;