کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155686 | 1666359 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate](/preview/png/10155686.png)
چکیده انگلیسی
In this paper, a new 4H-SiC double-layer thin n-base LTT with a trenched-junction isolated amplifying gate is proposed and investigated to compensate for the shortcomings of the conventional SiC amplifying gate structures. By using double-layer thin n-base structure, the turn-on performance of the pilot LTT is improved. According to simulations, the trenched-junction isolated amplifying gate works well and the turn-on delay of the proposed device is only 451 ns, when triggered by 500â¯mW/cm2 ultraviolet light. Meanwhile, the breakdown voltage remains higher than 10â¯kV. Comparing with conventional resistance isolated amplifying gate and trench isolated amplifying gate, the proposed trenched-junction isolated gate structure shows better performances in both area utilization and blocking characteristic.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 1-8
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 1-8
نویسندگان
Xi Wang, Hongbin Pu, Qing Liu, Liqi An,