کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155705 | 1666359 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The voltage VCE, bias influence studies on total ionizing dose (TID) in bipolar junction transistors (BJTs) were investigated. The BJTs were set at forward active mode of base-emitter voltage (VBE) swept from 0 to 1.0â¯Vâ¯at different biased conditions of VCE, ranging from 1â¯V to 2â¯Vâ¯at an interval of 0.25â¯V during 60Co γ irradiation. The damage mechanism of TID in BJTs at different VCE bias conditions were analysed by forward Gummel characteristics, forward current gain (βf), normalized excess base current (ÎIB/IBpre), normalized excess collector current (ÎIC/ICpre), normalized current gain (βfpost/βfpre), ideality factor (n) and power dissipation (Pd). The results show that the increments of base current (IB) and collector current (IC) are slightly different in various VCE bias conditions which also effects slight changes in their current gain (Îβf) degradation. The current gain degradation (βf) at high bias VCE degraded more slightly than low bias VCE. The ÎIB/IBpre, ÎIC/ICpre and βfpost/βfpre estimated shows similar trend of different VCE bias conditions resulting into varying distribution of performance degradation of the BJT. The ideality factors (n) for excess base current (ÎIB) were â¼2 for VBE from 0.35â¯V to 0.6â¯V at different VCE bias conditions. Thus, ideality factor (n) slightly increases as the VCE bias rises and decreases with the increased accumulated total dose level after the n peak value was obtained at TID equals to 130â¯krad (Si) for irradiated BJTs. Finally, the power dissipated (Pd) by BJTs were compared as VCEâ¯=â¯2â¯Vâ¯â¯>â¯â¯1.75>1.5â¯Vâ¯â¯>â¯â¯1.25>1â¯V and were noted to be more effective at VBE>0.6â¯V which also concur with temperature rise TR. The TR in BJTs resulted into self-heating effects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 194-202
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 194-202
نویسندگان
Olarewaju Mubashiru Lawal, Shuhuan Liu, Zhuoqi Li, JiangKun Yang, Aqil Hussain,