A new design approach to improve DC, analog/RF and linearity metrics of Vertical TFET for RFIC design

This paper presents a novel design of Vertical Tunnel Field Effect Transistor (VTFET) using work-function engineering. In this work, we investigate the impact of work-function engineering for the enhancement of the metrics such as DC, analog/RF and linearity parameters for the low-power, high-speed and high-frequency applications. Using this concept of device engineering, it is demonstrated that VTFET offers the superior improvement in terms of steeper subthreshold slope, SS=26mV/decade, which results in increase of ON-state current, reduction in DIBL=25mV/V and increment in ratio of ION/IOFF of the order of 1011. Moreover, the appropriate selection of work-function for the source, gate and drain electrodes in metal electrodes work function engineering (MEWE) VTFET deals with the trade-off between analog/RF and linearity parameters. This device offers tremendous results in terms of analog/RF and linearity performance as comparison to conventional VTFET and also overcome the drawbacks like short-channel effects and hot-carrier effects.