کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155716 | 1666359 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasma-enhanced chemical vapor-deposited SiN and liquid-phase-deposited SiO2 stack double-layer anti-reflection films for multi-crystalline solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We successfully fabricated a double-layer anti-reflection film for multi-crystalline silicon solar cells through liquid-phase deposition to deposit silicon dioxide (SiO2) film on a multi-crystalline silicon surface and plasma-enhanced chemical vapor deposition to deposit silicon nitride (SiN) film on a SiO2 film surface. The SiO2 film thicknesses were 10, 15, and 20â¯nm, and the SiN film thickness was 60â¯nm. The reflectance of the substrate markedly decreased as the double-layer film was deposited. Moreover, with different film thicknesses, the minimal values of the reflectance were 4.91%, 2.75%, and 2.83% at the wavelengths of 609, 597, and 634â¯nm. The average reflection reached 6.92% when the thicknesses of SiO2 and SiN films were 20 and 60â¯nm in the wavelength range of 400-1100â¯nm. The minority carrier lifetimes of the multi-crystalline silicon substrates were 7.44, 7.21, and 7.27â¯Î¼sâ¯at different film thicknesses. The short circuit current density and efficiency of the solar cell reached 34.52â¯mA/cm2 and 16.56% when the thicknesses of the SiO2 and SiN films were 20 and 60â¯nm, respectively. Low reflectance and good cell performance indicated that the double-layer film composed of SiO2 and SiN films were suitable for multi-crystalline silicon solar cells as the anti-reflection film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 296-303
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 296-303
نویسندگان
Jing He, Yangchuan Ke,