Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate

A novel normally-off AlGaN/GaN HEMT with a recess-free gate featuring field coupling capability is proposed via modeling and simulation design for the first time. The simplified numerical model confirms the field coupling effect can drag down Schottky barrier of the source for modulating the reverse Schottky barrier diode current at a positive gate voltage. An experimental calibration and the detailed simulation suggest the proposed HEMT's good potential in electronic application.