کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155753 | 1666359 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved performance of AlGaN-based near ultraviolet light-emitting diodes with convex quantum barriers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The optical and physical properties of AlGaN-based ultraviolet light-emitting diodes with specific design of convex quantum barriers are numerically investigated in this work. The simulation results show that the designed LED with convex quantum barriers has been enhanced by 43.6% in light output power, while the efficiency droop has been reduced to 14.0% at an injection current of 180â¯mA, compared with the conventional LED with a stationary component Al0.15Ga0.85N barriers. Through the further analysis it can conclude that these improvements are mainly attributed to the enhanced hole injection efficiency and the suppressed electron overflow as well as the reduction of the electrostatic fields in the active region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 608-613
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 608-613
نویسندگان
Linyuan Wang, Guang Li, Weidong Song, Hu Wang, Xingjun Luo, Yiming Sun, Bolin Zhang, Jian Jiang, Shuti Li,