Improved performance of AlGaN-based near ultraviolet light-emitting diodes with convex quantum barriers

The optical and physical properties of AlGaN-based ultraviolet light-emitting diodes with specific design of convex quantum barriers are numerically investigated in this work. The simulation results show that the designed LED with convex quantum barriers has been enhanced by 43.6% in light output power, while the efficiency droop has been reduced to 14.0% at an injection current of 180 mA, compared with the conventional LED with a stationary component Al0.15Ga0.85N barriers. Through the further analysis it can conclude that these improvements are mainly attributed to the enhanced hole injection efficiency and the suppressed electron overflow as well as the reduction of the electrostatic fields in the active region.