کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155754 | 1666359 | 2018 | 32 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of sulfurization temperature on the properties of CuIn(S,Se)2 thin films fabricated from electrodeposited CuInSe2 precursors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This paper reports the analysis of S diffusion into electrodeposited CuInSe2 (CISe) precursors during post-sulfurization treatment at different sulfurization temperatures. The morphology, composition, structure and optical properties of CuIn(S,Se)2(CISSe) films were characterized by SEM, EDS, XRD, Raman scattering and UV-Vis-NIR spectrophotometer. It was found that high sulfurization temperatures can facilitate the incorporation of sulfur into the precursor film and improve the crystalline properties of the sulfurized films. The best sample is the one prepared by sulfurization at 500â¯Â°C.Itexhibitsrelatively homogeneous CuIn(SxSe1-x)2 phase structure. In addition, we observed a sulfur concentration difference between top part and bottom part of the sulfurized films. All these films exhibit high transmission and their optical band gapsincrease with the increase of annealing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 614-623
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 614-623
نویسندگان
Wei Li, Mengqi Wang, Yinging Pan, Lu Han, Yanqing Lai, Yan Jiang, Liangxing jiang, Kailiang Zhang, Fangyang Liu,