کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155759 | 1666359 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Platinum doping effect on In2O3MSM IR photodetectors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The un-doped and platinum-doped In2O3 thin films were deposited for the investigation of platinum doping effect on the structural, morphological and electrical properties of In2O3 based metal-semiconductor-metal infrared photodetectors. The In2O3 metal-semiconductor-metal infrared photodetectors were also fabricated for obtaining the electrical characteristics such as the carrier recombination lifetime, diffusion length, carrier density, mobility, saturation current, barrier height, series resistance and ideality factor. It was seen from the characterization results that the Pt dopant usage has a prominent effect on properties of In2O3 metal-semiconductor-metal infrared photodetectors which are not extensively studied in the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 650-660
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 650-660
نویسندگان
Tarık Asar, Veysel Baran, Gürkan KurtuluÅ, Meltem Dönmez, Süleyman Ãzçelik,