کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248770 | 49323 | 2014 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper a short review is given about the evolution of dielectric rear side passivation technologies as well as on state-of-the-art cell and module results. Simple and cost effective cell and module designs utilizing standard as well as innovative manufacturing technologies are presented. Furthermore, it is shown that for all major steps multiple process options are available to further reduce the manufacturing costs. Using an optimized emitter and screen-printed metallization on commercially available 156Â mmÃ156Â mm p-type Czochralski-grown crystalline silicon wafers best cell efficiencies of 19.9% without dielectric rear surface passivation and 21.0% with dielectric rear surface passivation are demonstrated. Replacing the screen-printed front contacts by electroplated nickel-copper contacts record efficiencies of up to 21.3% are reached. By optimizing the module design and materials to reduce the resistive and optical losses, a peak module power of up to 306Â W and 19.5% aperture area efficiency are achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 120, Part A, January 2014, Pages 417-425
Journal: Solar Energy Materials and Solar Cells - Volume 120, Part A, January 2014, Pages 417-425
نویسندگان
Axel Metz, Dennis Adler, Stefan Bagus, Henry Blanke, Michael Bothar, Eva Brouwer, Stefan Dauwe, Katharina Dressler, Raimund Droessler, Tobias Droste, Markus Fiedler, Yvonne Gassenbauer, Thorsten Grahl, Norman Hermert, Wojtek Kuzminski, Agata Lachowicz,