کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248824 | 49411 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution](/preview/png/10248824.png)
چکیده انگلیسی
Electrical and optical characterisation of hydrogenated amorphous silicon-oxygen alloy thin films (a-SiOx:H, x<2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 °C is presented. The samples were investigated by Fourier transform infrared spectroscopy (FTIR), optical transmission, the constant photocurrent method (CPM), conductivity and steady-state photoconductivity measurements. With increasing oxygen concentration, the Tauc gap increases from 1.69 to 2.73 eV. The sample with an oxygen concentration of 26.2 at% and a reasonably high bandgap of 2.18 eV shows photoconductivity comparable to that of pure a-Si:H films. The Urbach parameter (E0) increases almost linearly with oxygen concentration whereas the dangling bond defect density is found to be saturating at a value of about 7.1Ã1016 cmâ3. One of the highly alloyed samples with E0=123meV exhibited a detectable photosensitivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 89, Issue 1, 14 October 2005, Pages 49-59
Journal: Solar Energy Materials and Solar Cells - Volume 89, Issue 1, 14 October 2005, Pages 49-59
نویسندگان
A. BacıoÄlu, A.O. KodolbaÅ, Ã. Ãktü,