کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248859 | 49416 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells](/preview/png/10248859.png)
چکیده انگلیسی
It is found that the diffusion doping of CdTe thin films by Cu at 400°C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 85, Issue 3, 31 January 2005, Pages 371-383
Journal: Solar Energy Materials and Solar Cells - Volume 85, Issue 3, 31 January 2005, Pages 371-383
نویسندگان
T.D. Dzhafarov, S.S. Yesilkaya, N. Yilmaz Canli, M. Caliskan,