Magnetotransport measurement of (Ga,Mn)As epilayers with low-temperature annealing

Magnetotransport features of a ferromagnetic semiconductor (Ga,Mn)As epilayer are found to change by annealing at 250 °C. Magnetoresistance curves of the annealed sample indicate that the change in the magnetic easy axis in the film plane as well as the change in the magnetization reversal processes are induced by the enhancement in the contribution of [1 1 0] uniaxial anisotropy. The origin of the enhancement in [1 1 0] uniaxial anisotropy is also discussed.