کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364062 | 871361 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, electrical and mechanical properties of templated silsesquioxane porous films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural, electrical and mechanical properties of templated silsesquioxane porous films Structural, electrical and mechanical properties of templated silsesquioxane porous films](/preview/png/10364062.png)
چکیده انگلیسی
Porous dielectric films were successfully synthesized by incorporating poly(amidoamine) (PAMAM) template to silsesquioxane host polymer. The structural, electrical and mechanical properties of the films could be tuned with PAMAM concentration. The porosity of the films increased while the dielectric constant of the films decreased with PAMAM fraction. Films with ultra-low dielectric constant about 2.06 could be obtained with leakage current density on the order of 10â7 A/cm2 at 1 MV/cm. The conduction mechanism was analyzed and showed that the carries in the films followed Schottky mechanism. The mechanical properties of the films were determined with nanoindentation. Both elastic modulus and hardness decreased with PAMAM concentration, suggesting that the incorporation of the porosity to the films compromised their mechanical properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issue 2, February 2005, Pages 125-131
Journal: Microelectronic Engineering - Volume 77, Issue 2, February 2005, Pages 125-131
نویسندگان
Suzhu Yu, Terence K.S. Wong, Xiao Hu, Jun Wei, Ming Shyan Yong,