کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364063 | 871361 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of oxidant additives for exact selectivity control of W- and Ti-CMP process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of oxidant additives for exact selectivity control of W- and Ti-CMP process Effects of oxidant additives for exact selectivity control of W- and Ti-CMP process](/preview/png/10364063.png)
چکیده انگلیسی
Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on SiO2 layer, the Ti/TiN barrier layer is usually deposited onto a SiO2 layer in order to increase the adhesion ability with the tungsten film. Generally, for the tungsten chemical mechanical polishing (W-CMP) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effects of oxidants controlling the polishing selectivity of the W/Ti/TiN layer were investigated. The alumina (Al2O3)-based slurry with H2O2 oxidizer was used for CMP applications. As an experimental result, for the case of 5% oxidizer added, the removal rates were improved and a polishing selectivity of 1.4:1 was obtained. Therefore we conclude that the W and Ti metal CMP characteristics are strongly dependent on the amounts of H2O2 oxidizer additive.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issue 2, February 2005, Pages 132-138
Journal: Microelectronic Engineering - Volume 77, Issue 2, February 2005, Pages 132-138
نویسندگان
Yong-Jin Seo, Woo-Sun Lee,