کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364175 | 871501 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation](/preview/png/10364175.png)
چکیده انگلیسی
Plasma immersion ion implantation (PIII) technique was employed to form Tantalum nitride diffusion barrier films for copper metallization on silicon. Tantalum coated silicon wafers were implanted with nitrogen at two different doses. A copper layer was deposited on the samples to produce Cu/Ta(N)/Si structure. Samples were heated at various temperatures in nitrogen ambient. Effect of nitrogen dose on the properties of the barrier metal was investigated by sheet resistance, X-ray diffraction and scanning electron microscopy measurements. High dose nitrogen implanted tantalum layer was found to inhibit the diffusion of copper up to 700 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issue 1, September 2005, Pages 53-59
Journal: Microelectronic Engineering - Volume 82, Issue 1, September 2005, Pages 53-59
نویسندگان
Mukesh Kumar, Rajkumar Rajkumar, Dinesh Kumar, A.K. Paul,