کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10364196 871506 2005 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Compensated aspect ratio dependent etching (CARDE) using gray-scale technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Compensated aspect ratio dependent etching (CARDE) using gray-scale technology
چکیده انگلیسی
We report a photoresist offset method using gray-scale technology to counteract the effect of aspect ratio dependent etching (ARDE), achieving controlled etch depths across a range of aspect ratios. Previously, we have reported the first fabrication of a deep phase Fresnel lens (PFL) in silicon through the use of gray-scale technology. As each PFL ridge becomes thinner at larger radii of the PFL, ARDE causes a significant reduction in profile accuracy. Thus, in this paper, a compensated aspect ratio dependent etching (CARDE) process is proposed and demonstrated to enable controlled ridge heights/depths on large diameter PFLs containing a variety of ridge widths. A compensation function is used during optical mask design to incorporate a photoresist offset, defining wide ridges with higher gray levels to locally modulate the time of etching, effectively giving thin ridges a head start during the etch. Multiple PFL profiles, both compensated and uncompensated, are designed and fabricated. Using a phasor-based profile evaluation method, PFLs fabricated using the CARDE process are shown to exhibit an increase in profile accuracy and calculated lens efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issue 1, January 2005, Pages 85-94
نویسندگان
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