کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364789 | 871819 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization and estimation of tunnel barrier height in metallic single-wall carbon nanotube quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
A tunnel barrier height has been estimated in quantum dots (QDs) formed in metallic single-wall carbon nanotubes (SWNTs), where QDs can be fabricated simply by depositing metallic contacts on top of the nanotube. Transport measurements have been carried out in a temperature range between 1.5 and 300Â K, and revealed single and multi-QD behaviors in different samples at low temperatures. The Arrhenius plot gave an activation energy of â¼6Â meV for the barrier formed very likely at the metal-SWNT interface for the single QDs, and two activation energies for seemingly double dots. The latter case comes from the unintentional tunnel barrier due to defects. Discussions on the QD formation and suggestions for a higher temperature operation are given.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issue 2, October 2005, Pages 196-200
Journal: Microelectronic Engineering - Volume 82, Issue 2, October 2005, Pages 196-200
نویسندگان
D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi,