Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling

Pre-amorphization implantation has been applied as a shallow junction technology. Roughness at amorphous/crystalline (a/c) interface should be controlled to improve junction characteristics. To understand and model a/c interface roughness, molecular dynamic method is applied in simulating pre-amorphization implantation. A method to reproduce roughness at a/c interface by molecular dynamic simulation is presented. A model of interface roughness is presented. Si and Ge implantation from 2-20 keV at a dose of 1 × 1015 cm−2 is simulated. The depth of a/c interface is reproduced. Experimental results of a/c interface roughness are successfully simulated. The interface roughness is well reproduced and interpreted by the model presented.