کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10406973 892819 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing
چکیده انگلیسی
An alternative technique for production of devices which uses both silicon crystalline wafers (p-type) and heavy doped amorphous silicon thin films (n-type) is reported. The amorphous silicon acts as a finite source of dopant and is deposited (at low temperature, 70 °C) by plasma enhanced chemical vapor deposition on silicon wafers. Afterwards, the process of dopant diffusion into the crystalline silicon occurs in a diffusion furnace at 1000 °C for 2 h, to create p-n junctions. Using SIMS analyses, a dopant (P) transfer into c-Si of about 30% is verified and 87% of the dopant transferred is electrically active. Consequently, n-MOSFET devices are produced using a gate oxide thermally grown at the same diffusion temperature for one hour. The preliminary results of the MOSFET (channel length and width of 0.5 and 5 mm, respectively) show a depletion behavior with a threshold voltage, Vth=−8.2 V and afield-effect mobility, µFE=187.8 cm2/(Vs).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 210-214
نویسندگان
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