کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10406981 | 892819 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys](/preview/png/10406981.png)
چکیده انگلیسی
The amorphization by implantation of strained silicon-germanium epitaxial layers is investigated by experiments and simulation according to the germanium content in the film and the implantation conditions. Experimental results are used to calibrate a numerical model based on a combined approach between a Binary Collision Approximation (BCA) module and a kinetic Monte Carlo (kMC) module. The calibration is implemented in the Synopsys Sentaurus Process simulator and a close agreement between simulations and experiments is shown. Experimental results show that by increasing the germanium concentration, amorphous thickness is reduced for high energy implantations. Germanium content seems to have less impact at low energy implantations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 247-250
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 247-250
نویسندگان
Anthony Payet, Flavia Piegas Luce, Caroline Curfs, Benoît Mathieu, Benoît Sklénard, Jean-Charles Barbé, Perrine Batude, Sylvain Joblot, Clément Tavernier, Benjamin Colombeau, Sofiene Guissi, Ignacio Martin-Bragado, Patrice Gergaud,