کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10406989 | 892830 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Purification of metallurgical-grade silicon powder via chemical attack by hydrofluoric and nitric acids followed by thermal treatment
ترجمه فارسی عنوان
خالص سازی پودر سیلیکون درجه بندی متالورژی با استفاده از اسیدهای هیدروفلوئور و نیتریک شیمیایی و سپس درمان حرارتی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
We investigated a novel process for purifying metallurgical-grade silicon (MG-Si). MG-Si powder was first treated to form a thin porous silicon layer. This was heated at 900 °C under oxygen to weaken impurity-Si bonds. Samples were then chemically etched with dilute aqueous hydrofluoric acid. To understand the mechanisms in this purification process, structural, chemical composition and optical properties of MG-Si powder before and after treatment were characterized using Fourier-transform infrared (FTIR), inductively coupled plasma-atomic emission (ICP-AES), and photoluminescence (PL) spectroscopy techniques. FTIR studies of treated MG-Si powder revealed the formation of a thin porous silicon layer on the top surface, as evidenced by SiHx vibration peaks. PL spectra show that 30-min HF etching of MG-Si led to an increase in red emission, indicating the formation of porous silicon and suggesting a decrease in impurities. ICP-AES revealed that the process led to significant decreases in the concentrations of 15 different elemental impurities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1742-1746
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1742-1746
نویسندگان
Marouan Khalifa, Malek Atyaoui, Messaoud Hajji, Rachid Ouertani, Hatem Ezzaouia,