کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10407064 892830 2013 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An evaluation of the deposition parameters for indium sulfide (In2S3) thin films using the grey-based Taguchi method
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
An evaluation of the deposition parameters for indium sulfide (In2S3) thin films using the grey-based Taguchi method
چکیده انگلیسی
This paper presents an optimal deposition-parameter design for Indium sulfide (In2S3) thin films, using radio frequency (RF) magnetron sputtering for soda-lime glass substrates. The grey relational analysis (GRA), using the Taguchi method with an L9 (34) orthogonal array, a signal-to-noise (S/N) ratio and an analysis of variance (ANOVA) are used to optimize the multiple performance characteristics (deposition rate and optical transmittance). The effect of the optimization of the In2S3 films' deposition parameters (RF power, sputtering pressure, substrates temperature and deposition time) on the structure, morphology and optical transmittance are studied. The results of the confirmation experiments demonstrate that the deposition rate and optical transmittance of In2S3 films is improved by using a deposition process that is optimized using the grey-based Taguchi method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1879-1887
نویسندگان
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