کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411130 894548 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A TCAD methodology for high-speed photodetectors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A TCAD methodology for high-speed photodetectors
چکیده انگلیسی
Technology computer aided design (TCAD) of semiconductor devices exhibits the advantages of reduced development costs and development time. In this worka TCAD methodology has been developed for high-speed photodetectors. The calibration procedure for fixing the free parameters in the physical models employed in the simulation has been illustrated for a commercially available InGaAs/InP p-i-n photodetector. This approach has been illustrated using a specific example where the task was to optimize the absorption layer thickness of a novel photodetector structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 1002-1008
نویسندگان
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