کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411702 | 894783 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved modeling and parameter-extraction procedure emphasizing on extrinsic inductances and base-collector capacitances of collector-up HBTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improved modeling and parameter-extraction procedure emphasizing on extrinsic inductances and base-collector capacitances of collector-up HBTs Improved modeling and parameter-extraction procedure emphasizing on extrinsic inductances and base-collector capacitances of collector-up HBTs](/preview/png/10411702.png)
چکیده انگلیسی
In this paper, an improved modeling and parameter-extraction procedure requiring no special de-embedding test structures, reverse/high-forward-biased measurements, or the use of numerical optimization process has been successfully developed to efficiently determine the equivalent-circuit parameters of collector-up heterojunction bipolar transistors. This new approach, modified from a previous work by our group, emphasizes the ad hoc analytical extraction of extrinsic inductances (Lb, Lc, Le) and base-collector capacitances (Cex, Cbc), which are crucial parameters for characterizing RF performances in device modeling. A comprehensive set of practical modeling equations is derived from systematically formulating two-port-network matrices on the basis of measured S-parameters. Physically realistic results are demonstrated under various biasing conditions for the p-n-p InGaAs collector-up heterojunction bipolar transistor with a graded base of 25Â nm. The superiority of the improved technique is verified by observing the consistency between calculated and measured S-parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1071-1076
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1071-1076
نویسندگان
H.C. Tseng, J.H. Chou,