Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas

Additional current-voltage combined with capacitance/conductance-voltage analyses as well as constant current stress measurements have suggested the presence of hole traps with a high capture cross section (10−13 cm2) in the bulk of the oxide at 5 mTorr. This behavior is not observed at 2 mTorr.