کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10413388 | 895565 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The undoped GaN (u-GaN) and two-dimensional electron gas (2DEG) metal-semiconductor-metal (MSM) photodetectors with semi-transparent Ni/Au Schottky barrier contact electrodes were fabricated. It was found that we could achieve a larger Ni/Au transmittance, higher Schottky barrier heights and larger photocurrent to dark current contrast ratios by photo-chemical annealing of these photodetectors in O2. It was also found that the maximum quantum efficiencies were 13% and 57% for the photo-chemical annealing u-GaN and 2DEG photodetectors, respectively. Furthermore, it was found that we could achieve a larger responsivity, a lower noise level and a larger detectivity by using the 2DEG structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 459-463
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 459-463
نویسندگان
Y.K. Su, P.C. Chang, C.H. Chen, S.J. Chang, C.L. Yu, C.T. Lee, H.Y. Lee, J. Gong, P.C. Chen, C.H. Wang,