کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620157 | 988593 | 2013 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the role of Fe in the growth of single crystalline heteroepitaxial Au thin films on sapphire
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Thin Au-Fe bilayers were deposited on c-plane sapphire (α-Al2O3) substrates at room temperature employing the electron beam deposition method. The layers were found to be single crystalline (i.e. the grain size was much larger than the film thickness), with a [1 1 1] and [1 1 0] texture for Au and Fe, respectively, and strong heteroepitaxy to the substrate. Au films deposited on sapphire and Au-Fe bilayers deposited on amorphous SiO2 were polycrystalline and exhibited random in-plane orientation of the grains. The effects of Fe and the Fe-sapphire interface on the microstructure of the Au film were investigated and discussed in terms of the orientation relationships, in-plane strain, interface energy and adhesion. The microstructures of annealed and as-deposited films were very similar, indicating that as-deposited films are close to thermodynamic equilibrium in terms of the orientation relationship with the substrate. This is uncommon for non-equilibrium thin film deposition processes, which usually result in a high density of defects in the as-deposited films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 61, Issue 11, June 2013, Pages 4113-4126
Journal: Acta Materialia - Volume 61, Issue 11, June 2013, Pages 4113-4126
نویسندگان
D. Amram, E. Rabkin,