کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620227 | 988604 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Attraction of semiconductor nanowires: An in situ observation
ترجمه فارسی عنوان
جذب نانوسیمهای نیمه هادی: مشاهدات در محل
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
چکیده انگلیسی
In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of â¼25 nm attracted at a distance of â¼25 nm, while large-diameter NWs of â¼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 61, Issue 19, November 2013, Pages 7166-7172
Journal: Acta Materialia - Volume 61, Issue 19, November 2013, Pages 7166-7172
نویسندگان
Bin Chen, Qiang Gao, Li Chang, Yanbo Wang, Zibin Chen, Xiaozhou Liao, Hark Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish,