کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10620227 988604 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Attraction of semiconductor nanowires: An in situ observation
ترجمه فارسی عنوان
جذب نانوسیمهای نیمه هادی: مشاهدات در محل
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
چکیده انگلیسی
In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of ∼25 nm attracted at a distance of ∼25 nm, while large-diameter NWs of ∼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 61, Issue 19, November 2013, Pages 7166-7172
نویسندگان
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