کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620242 | 988604 | 2013 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory](/preview/png/10620242.png)
چکیده انگلیسی
The effects of nitrogen doping on the phase-change performance of Sb-rich Si-Sb-Te materials are systemically investigated, focusing on the chemical state and the role of nitrogen upon crystallization. The tendency of N atoms to bond with Si (SiNx) in the crystalline film is analyzed by X-ray photoelectron spectroscopy. The microstructures of the materials mixed with Sb2Te crystal grains and amorphous Si/SiNx regions are elucidated via in situ transmission electron microscopy, from which a percolation behavior is demonstrated to possibly describe the random crystallization feature in the nucleation-dominated nanocomposite material. The phase-change memory cells based on N-doped Sb-rich Si-Sb-Te materials display more stable and reliable electrical performance than the nitrogen-free ones. An endurance characteristic in the magnitude of 107Â cycles of the phase-change memory cells is realized with moderate nitrogen addition, meaning that the nitrogen incorporation into Si-Sb-Te material is a suitable method to achieve high-performance phase-change memory for commercial applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 61, Issue 19, November 2013, Pages 7324-7333
Journal: Acta Materialia - Volume 61, Issue 19, November 2013, Pages 7324-7333
نویسندگان
Xilin Zhou, Liangcai Wu, Zhitang Song, Yan Cheng, Feng Rao, Kun Ren, Sannian Song, Bo Liu, Songlin Feng,