کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620615 | 988645 | 2011 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Energetics and concentration of defects in Gd2Ti2O7 and Gd2Zr2O7 pyrochlore at high pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Energetics and concentration of defects in Gd2Ti2O7 and Gd2Zr2O7 pyrochlore at high pressure Energetics and concentration of defects in Gd2Ti2O7 and Gd2Zr2O7 pyrochlore at high pressure](/preview/png/10620615.png)
چکیده انگلیسی
Using first-principles calculations and complementary experiments, the defect formation energies and defect concentrations were calculated as a function of pressure. The results show that at high pressure, the defect formation energies decrease with pressure for both systems. In Gd2Ti2O7, the dominant defect type is cation anti-site defect, the local structure around a defect is highly distorted, and the energetically favorable defect-defect interactions at shorter distance suggest the possibility of defect clustering. In Gd2Zr2O7, anion Frenkel-pair defects are favored at all pressures and the dominant defect type involving a cation is a coupled defect of a cation anti-site and an anion Frenkel-pair defect. There are only minor distortions around the defects, and the defect-defect interactions are weak, which suggests almost-ideal non-interacting defect formation. Comparison of experimentally observed defect concentrations and those based on the calculated defect formation energies suggests that the defects formed at high pressure are better estimated with a concentrated limit approximation, while those formed at ambient pressure can be evaluated at a dilute limit approximation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 59, Issue 4, February 2011, Pages 1607-1618
Journal: Acta Materialia - Volume 59, Issue 4, February 2011, Pages 1607-1618
نویسندگان
Jianwei Wang, Fuxiang Zhang, Jie Lian, Rodney C. Ewing, Udo Becker,