کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620702 | 988655 | 2010 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Basal slip latent hardening by prism plane slip dislocations in sapphire (α-Al2O3)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
The properties of sapphire (α-Al2O3) predeformed at T = 1450 °C by ã101¯0ã{12¯10} prism plane slip and subsequently deformed in ã12¯10ã(0 0 0 1) basal slip between 1050 and 1250 °C were investigated. The critical resolved shear stress in basal slip was increased with respect to the non-predeformed samples by a temperature-independent increment of ÎÏ = 43.6 MPa consistent with a forest dislocation mechanism. The deformation microstructures were investigated by transmission electron microscopy. Prism plane slip involves ã101¯0ã dislocations that are essentially decomposed into two 1/3ã12¯10ã dislocations separated by a constant distance of 10 nm. No evidence of the dissociation into three partials could be found. Reactions between dislocations of the most favored P slip system (12¯10)[1¯010], and of the other two less preferred P systems were frequently observed forming dipoles and junctions at moderate and high temperatures, respectively. The samples subsequently deformed in basal slip exhibit junction reactions between dislocations of the two systems. The predeformation tests were designed to engender 1/3ã101¯0ã partial dislocations presumed to be at the origin of basal twinning but no basal twins were observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 58, Issue 17, October 2010, Pages 5610-5619
Journal: Acta Materialia - Volume 58, Issue 17, October 2010, Pages 5610-5619
نویسندگان
M. Castillo-RodrÃguez, A. Muñoz, J. Castaing, P. Veyssière, A. DomÃnguez-RodrÃguez,