کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10621106 | 988775 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparative study of grain-boundary migration and grain-boundary self-diffusion of [0Â 0Â 1] twist-grain boundaries in copper by atomistic simulations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparative study of grain-boundary migration and grain-boundary self-diffusion of [0Â 0Â 1] twist-grain boundaries in copper by atomistic simulations Comparative study of grain-boundary migration and grain-boundary self-diffusion of [0Â 0Â 1] twist-grain boundaries in copper by atomistic simulations](/preview/png/10621106.png)
چکیده انگلیسی
Molecular-dynamics simulations were used to study grain-boundary migration as well as grain-boundary self-diffusion of low-angle and high-angle [0Â 0Â 1] planar twist grain boundaries (GBs) in copper. Elastic strain was imposed to drive the planar [0Â 0Â 1] twist GBs. The temperature dependence of the GB mobility was determined over a wide misorientation range. Additionally grain-boundary self-diffusion was studied for all investigated [0Â 0Â 1] planar twist GBs. A comparison of the activation energies determined shows that grain-boundary migration and self-diffusion are distinctly different processes. The behavior of atoms during grain-boundary migration was analyzed for all studied GBs. The analysis reveals that usually in absolute pure materials high-angle planar [0Â 0Â 1] twist GBs move by a collective shuffle mechanism while low-angle GBs move by a dislocation based mechanism. The obtained activation parameters were analyzed with respect to the compensation effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 53, Issue 6, April 2005, Pages 1597-1609
Journal: Acta Materialia - Volume 53, Issue 6, April 2005, Pages 1597-1609
نویسندگان
B. Schönfelder, G. Gottstein, L.S. Shvindlerman,