کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10637725 | 993989 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of a degraded SrTiO3 layer at the YBa2Cu3O7âδSrTiO3 interface on the dielectric behavior at cryogenic temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of a degraded SrTiO3 layer at the YBa2Cu3O7âδSrTiO3 interface on the dielectric behavior at cryogenic temperature Influence of a degraded SrTiO3 layer at the YBa2Cu3O7âδSrTiO3 interface on the dielectric behavior at cryogenic temperature](/preview/png/10637725.png)
چکیده انگلیسی
In an YBa2Cu3O7âδ/SrTiO3/YBa2Cu3O7âδ parallel capacitor fabricated by a chemical mechanical planarization method, the dielectric constant and loss in the presence of electric fields at 2.2 K were more than 26,000 and less than 0.027, respectively. We propose a multilayer model that explains this behavior. The model assumes that the SrTiO3 film is composed of single-crystal-like SrTiO3 layers with a dielectric constant εr = 30,000 and degraded SrTiO3 layers with dielectric constants that vary continuously from 25, the dielectric constant of YBa2Cu3O7âδ, to 30,000. Results of a numerical calculation revealed that the thickness of the single-crystal-like SrTiO3 layer was more than 92% of a 600-nm-thick SrTiO3 film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Cryogenics - Volume 45, Issue 4, April 2005, Pages 300-303
Journal: Cryogenics - Volume 45, Issue 4, April 2005, Pages 300-303
نویسندگان
Hiroshi Takashima, Ruiping Wang, Makoto Okano, Akira Shoji, Mitsuru Itoh,