Fabrication of broadband anti-reflective sub-micron structures using polystyrene sphere lithography on a Si substrate

- Employing PS spheres with a diameter of 600 nm as an etching mask.
- PS spheres were uniformly spun onto a 2 in. Si substrate.
- Two-step etching method to enhance the height of structures.
- Significantly reduced reflectance across the entire spectral range.