Silicon nano-wires grown at low temperature

Quantities of crystalline array-orderly silicon nano-wires (SiNWs) were fabricated using chemical-vapor-deposition (CVD) method at low temperature (550-400 °C). In the experiments, the decreasing temperature process was used. By means of transmission electron spectroscopy, X-ray diffraction and Raman spectroscopy, it was found that the SiNWs were well crystallized. Finally, the growth mechanism of the SiNWs during the decreasing process was discussed.