کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10642306 997647 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Barrier penetration in Kane type semiconductor nanostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Barrier penetration in Kane type semiconductor nanostructures
چکیده انگلیسی
Particle penetration through a square potential and a step potential barrier are studied with the eight-band Kane Hamiltonians. It has found expressions for transmission probability and reflection coefficients of electrons for both potentials. It is shown in the Kane model that the transmission probability will have a finite value that is different from the one-band model at the state where the barrier height is infinite. The Landauer formula for resistance is applied to the Kane type semiconductor heterostructures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 28, Issue 4, September 2005, Pages 447-452
نویسندگان
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