کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10642313 | 997647 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modified five-layer asymmetric coupled quantum well (M-FACQW) for giant negative refractive index change
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We have analyzed the electrorefractive properties of a GaAs/AlGaAs modified five-layer asymmetric coupled quantum well (M-FACQW). The theoretical analyses show that the M-FACQW is expected to exhibit a giant negative electrorefractive index change În in the transparent-wavelength region away from the absorption edge. The influence of fluctuations in layer thickness on the electrorefractive properties of the M-FACQW was also investigated. Although the fluctuation in layer thickness deteriorates the characteristics of În in the M-FACQW, the M-FACQW still maintains a very giant În compared with that of a conventional rectangular quantum well without thickness fluctuation. In addition, we have fabricated the M-FACQW with monolayer accuracy by solid-source molecular beam epitaxy, and measured its photoabsorption current. The experimental results are in good agreement with the calculated properties. This indicates that the M-FACQW has great potential for use in ultra-wideband and low-voltage optical modulators and switches.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 28, Issue 4, September 2005, Pages 507-513
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 28, Issue 4, September 2005, Pages 507-513
نویسندگان
Norio Niiya, Taro Arakawa, Kunio Tada, Fumiyuki Tadano, Tatsuya Suzuki, Joo-Hyong Noh, Nobuo Haneji,