کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10642327 997649 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate
چکیده انگلیسی
We have grown GaAs antidots in InAs matrix on (100) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5ML. For 2.5ML GaAs deposition, the grown antidots have a size of about 15-35nm in base diameter and about 2-4nm in height with a density about 3-4×1010cm−2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 25, Issue 4, January 2005, Pages 335-338
نویسندگان
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