کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10642337 997649 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A spin field effect transistor for low leakage current
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A spin field effect transistor for low leakage current
چکیده انگلیسی
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the “off”-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 25, Issue 4, January 2005, Pages 399-403
نویسندگان
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