The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/AlxGa1−xN/GaN heterostructures with different Al mole fraction in the AlxGa1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×103 cm2 /Vs−1 for GaN capping layer thickness grater than 100 Å with an Al0.32Ga0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×1012 cm−2 for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness.