کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10642382 | 997653 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanosecond scale carrier dynamics of self-assembled InAs/AlAs quantum dots studied by time-resolved photoluminescence
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Photo-excited carrier dynamics in the self-assembled InAs/AlAs quantum dot system are studied by time-resolved photoluminescence within the first two nanoseconds. Several unexpected energy shifts are observed, i.e., an initial redshift of ground state photoluminescence which is followed by a blueshift after â¼1Â ns, and a continuous blueshift of the first excited states emission. Moreover, steady-state photoluminescence shows a continuous redshift of the ground state peak with increasing excitation intensity. Our data support the idea that for the carrier dynamics in the InAs/AlAs quantum dot system the existence of AlAs X-states, tunneling and scattering play an important role in the lateral carrier transfer in such a dense quantum dot system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 28, Issue 3, August 2005, Pages 203-208
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 28, Issue 3, August 2005, Pages 203-208
نویسندگان
Z. Ma, K. Pierz, J. Hübner, W.W. Rühle,